Ryoichi Ishihara

Associate Professor, Group leader

Qutech, Dep. Quantum and Computer Engineering, Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology

Ishihara-lab focuses on the integration technologies for unconventional electronic systems; quantum computers, quantum sensors, neuromorphic computers, and biodegradable sensors. Our work involves new materials, scalable fabrication of electronic and photonic devices, and 3D heterogeneous integration, aiming to realize unconventional electronic systems.

Cryogenic Memristors Testing Setup for Neuromorphic Chips Based on Forming-Free Memristor Devices

The rapid evolution of neuromorphic computing demands innovative device architectures that emulate the brain’s efficiency and adaptability. Memristors—resistive switching devices with inherent memory effects—have emerged as promising candidates for hardware neural networks due to their low power consumption, high density, and compatibility with emerging technologies. Recently, forming-free memristor devices have gained attention because they simplify device initialization and improve reliability. However, the behavior of these devices in extreme environments, such as cryogenic conditions, remains relatively unexplored.

Cryogenic environments, characterized by temperatures well below ambient conditions, are increasingly relevant for applications ranging from quantum computing to space-based systems. This research aims to study the reliability and stability of forming-free memristors under cryogenic conditions. By developing a dedicated testing setup, we will evaluate whether these devices maintain their electrical characteristics and switching behavior at low temperatures, and assess their suitability for integration into spiking neural network (SNN) accelerators on neuromorphic chips.

Experimental Setup methods：

• Cryogenic Chamber/Probe Station:
  Develop or adapt an existing cryogenic chamber equipped with temperature control (ranging from 4 K to room temperature) to ensure precise and repeatable thermal conditions.
• Electrical Measurement System:
  Utilize high-precision semiconductor parameter analyzers and pulse generators to capture the memristor’s switching dynamics. Instrumentation will be calibrated for low-temperature operations.
• Device Integration:
  Mount forming-free memristor devices on test boards compatible with the cryogenic system. Ensure robust electrical contact and minimal thermal stress.

Expected Outcomes：

• Validation of a Cryogenic Testing Setup:
  A functional, reproducible platform for characterizing forming-free memristor devices at cryogenic temperatures.
• Insights into Device Reliability:
  A detailed analysis of how forming-free memristors behave under cryogenic conditions, including identification of any improvements or challenges compared to room temperature operation.
• Guidelines for Neuromorphic Integration:
  Recommendations on the feasibility and potential design modifications required for incorporating cryogenic memristor arrays into SNN accelerators, paving the way for advanced neuromorphic systems in extreme environments.

Interested? Please contact Ryoichi Ishihara r.ishihara@tudelft.nl or Erbing Hua <E.Hua@tudelft.nl>